Download Design for Manufacturability and Yield for Nano-Scale CMOS by Charles Chiang, Jamil Kawa PDF

By Charles Chiang, Jamil Kawa

This ebook walks the reader via the entire elements of manufacturability and yield in a nano-CMOS procedure. It covers all CAD/CAE points of a SOC layout circulate and addresses a brand new subject (DFM/DFY) severe at ninety nm and past. This ebook is a needs to learn booklet the intense practising IC fashion designer and a very good primer for any graduate pupil purpose on having a occupation in IC layout or in EDA device improvement.

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Extra info for Design for Manufacturability and Yield for Nano-Scale CMOS (Integrated Circuits and Systems)

Example text

For the segment of the wire i that has visible neighbors on both sides the Δ pseudo critical area is defined as Aˆij (x) = F + G/2, where the region F is the region of the critical area Aij (x) that goes to the other side of wire i but is not covered by the other side critical area Aik (x). The region E which is the overlap region between the critical areas Aij (x) and Aik (x), is included as Δ part of the pseudo critical area Aˆik (x). Aˆik (x) = D/2 + E/2. Note that the regions included by Aˆik (x) should not go to the other side of wire i because that part has been covered by Aˆij (x).

A yield engine interacting with the various EDA design tools controlling such a flow is highly desirable to close the loop of interaction between the modules in the context of DFM/DFY. 5 DFM and DFY: Fully Intertwined In summing up this chapter it is not hard for the reader to see the complexities associated with all aspects of the nano era IC manufacturing. Two major conclusions are self-evident. First, no single group owns the DFM and DFY responsibility, yet an oversight or the slightest error by one group or individual in the whole product flow is sufficient to either kill the product or to impact the product yield adversely and in a significant manner.

14) Open Critical Area - Mathematical Formulation Theoretically, the basic derivation fundamental ideas for the open critical area formula are a complement of the ideas used for the short critical area. 6 is the object for which the pseudo open critical area is formulated. 6. Open Critical Area on Wire i the actual open critical area on wire i begins to overlap with those on wires j and k. In order to avoid counting the overlap regions more than once when calculating the total open critical area, the concept of pseudo open critical areas is introduced.

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